Helical edge resistance introduced by charge disorder

Leonid Glazman

Yale University

Friday, 21 March 2014, 10:15
Lecture Hall F, K404

Electron puddles created by doping of a 2D topological insulator may violate the ideal helical edge conductance. Because of a long electron dwelling time, even a single puddle may lead to a significant inelastic backscattering. We find the resulting correction to the perfect edge conductance. Generalizing to multiple puddles, we assess the dependence of the helical edge resistance on temperature and on the doping level. Puddles with odd electron number carry a spin and lead to a logarithmically-weak temperature dependence of the resistivity of a long edge.