Switching and Memory Effects in Molecular Junctions
Tuesday, 20 March 2012, 12:30
In the field of molecular electronics, effects like charge-memory, bistability and switching
between charged and neutral states have been observed in STM  and molecular junctions
In this work we use model hamiltonians to describe molecular junctions, taking into account the
interaction between the electronic levels and the vibrational degrees of freedom (vibrons) of the
For a molecular level coupled to a vibron and in the presence of leads, we show that upon
applying gate or bias voltage, it is possible to induce charge-bistability and hysteresis [4,5].
We further propose theoretically a spin-memory effect in quantum dots and single molecules
coupled to ferromagnetic leads showing that the switching between spin states can be achieved
by electrical control .
Finally we propose possible extensions to chains and lattices of molecular junctions in
collaboration with E. Mentovich and coworkers from Tel Aviv University.
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